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20194月份
  [1] [2] [3] [4] [5] [6]
[7] [8] [9] [10] [11] [12] [13]
[14] [15] [16] [17] [18] [19] [20]
[21] [22] [23] [24] [25] [26] [27]
[28] [29] [30]        

最後更新2019/04/17
*
::: * 首頁 > 師資陣容 > 專任教師列表 > 黃俊達 老師

* * 黃俊達 老師
*

點閱 9269 人次 友善列印

發佈日期:2012-08-15
更新日期:2019-04-11


研究專長與興趣 》》》

太陽能電池
光檢測器
光電材料與元件
ULSI製程技術

黃俊達 教授
Distinguished Professor Jun-Dar Hwang
 教師研究室:電物二館 A18B-307(2)  
 研究室電話:(05) 271-7958  
 電子信箱:jundar@mail.ncyu.edu.tw
研究實驗室:微電子實驗室
實驗室位置:電物一館 A15-305
實驗室電話:(05) 271-7857

I. 主要學歷:

/肄業學校

國別

主修系所

學位

起訖年月

國立台灣科技大學

中華民國

電機系

學士

198409~198606

國立成功大學

中華民國

電機研究所

碩士

198809~199006

國立成功大學

中華民國

電機研究所

博士

199109~199601

 

II. 現職及與專長相關之經歷:

服務機關

服務部門/系所

職稱

起訖年月

現職

國立嘉義大學

電子物理學系

特聘教授

201401月迄今

國立嘉義大學

電子物理學系

教授兼系主任與所長

201002~201301

 

經歷

聯華電子公司

開發處

工程師

199007~199108

中洲科技大學

電子工程系

副教授

199602~200101

大葉大學

電機系

副教授

200102~200507

大葉大學

電機系

教授

200508~200807

國立嘉義大學

應用物理學系

副教授

200808~200907

國立嘉義大學

應用物理學系

教授

200908~201001

 

III. 近期代表著作︰

 

.

作者、題目、期刊名稱、卷數、頁數、年份

2009.01

Jun-Dar Hwang, C. J. Lin, "High 366/254 nm Rejection Contrast GaN MIS Photodetectors Using Nano Spin-Oxide," IEEE Electron Device Letters 30, 27 (2009). [Abstract]

2009.06

C H Lan, J D Hwang, S J Chang, Y C Lin, Y C Cheng, W J Lin, J C Lin, K J Chang, "Nitride-based metal-insulator-semiconductor capacitors with liquid-phase deposition oxide and (NH4)2Sx pretreatment prepared on sapphire substrates," Semiconductor Science & Technology 24, 075026 (2009). [Abstract]

2009.08

Chung Yuan Kung, Jun Dar Hwang, Yu Hong Chen, Pan Sheu Chen, and Hsun Joung Chan, "Investigation of Electrical Properties of Thermally Annealed SiGe Metal-Oxide-Semiconductor Capacitors Prepared by Liquid-Phase Deposition of Silicon Dioxide," Japanese Journal of Applied Physics 48, 086503 (2009). [Abstract]

2009.12

J. D. Hwang, Y. H. Chen, and P. S. Chen, "Different Growth-Temperature Effects on the Liquid-Phase-Deposited SiO2 Grown on Strained SiGe," Electrochemical and Solid-State Letters 13, H45 (2010). [Abstract]

2010.02

J. D. J. D. Hwang, and C. H. Chou, "On the origin of leakage current reduction in TiO2 passivated porosus silicon Schottky-barrier diode,'' Applied Physics Letters 96, 063503 (2010). [Abstract]

2010.04

C. H. Lan, J. D. Hwang, S. J. Chang, Y. C. Cheng, W. J. Lin, J. C. Lin, J. S. Liao, and Y. L. Lin, "(NH4)2Sx-Treated AlGaN MIS Photodetectors with LPD SiO2 Layer," Journal of The Electrochemical Society 157, H613 (2010). [Abstract]

2010.08

C. H. Lan, J. D. Hwang*, S. J. Chang, J. S. Liao, Y. C. Cheng, W. J. Lin, and J. C. Lin, "Investigations of ZnO nanowires and ZnO/p-GaN heterojunction diodes grown by different aqueous solutions zinc nitrate and zinc acetate," Electrochemical and Solid-State Letters 13, H363 (2010). [Abstract]

2010.08

J.D. Hwang*, D.S. Lin, Y.L. Lin, W.T. Chang, G.H. Yang, "Electrical properties of metal-oxide-semiconductor capacitors using liquid-phase deposited silicon-dioxide gate dielectric on sulfur-passivated germanium," Thin Solid Films 519, 833 (2010). [Abstract]

2010.12

J.D. Hwang*, S.B. Hwang, C.H. Chou, Y.H. Chen, "Investigation of opto-electronic properties on gradient-porosity porous silicon layer," Thin Solid Films 519, 2313 (2011). [Abstract]

2011.01

J.D. Hwang*, E.H. Zhang, "Effects of a a-Si:H layer on reducing the dark current of 1310 nm metal–germanium–metal photodetectors," Thin Solid Films 519, 3819 (2011).[Abstract]

2011.08

Wen-Tse Chang, Gwo-Huei Yang, Jun-Dar Hwang, Jun-Hung Lin,"High-quality nano spin-oxide for possible applications in metal–oxide semiconductor field-effect transistor", Micro & Nano Letters 6, 686–688  (2011). [Abstract]

2011.11

Gwo-Huei Yang, Wen-Tse Chang, Jun-Dar Hwang, Jun-Hung Lin, Yu-Hung Chen, "Effect of N2-annealing on n-type Si metal–oxide–semiconductor capacitors by using liquid-phase deposition SiO2", Micro & Nano Letters 6, p. 944 (2011). [Abstract]

2011.12

Jun-Dar Hwang, Li-Shang Lin, Ting-Jen Hsueh, and Sheng-Beng Hwang, "Large-Grain Epitaxial Thickening Polycrystalline Silicon Films on AIC-Seed Layer by HWCVD with Different Hydrogen Dilution", Electrochemical and Solid-State Letters 15 (3), H69-H71 (2012). [Abstract]

2012.01

Gow-Huei Yang, Jun-Dar Hwang, Yu-Hung Chen, and Chien-Mao Chan, "Comparison of electrical and optical properties of Al/SiO2/n-GaN and ITO/SiO2/n-GaN metal–oxide–semiconductor photodetectors", Micro & Nano Letters 7(1), 95 (2012). [Abstract]

2012.03

Jun Dar Hwang, Gwo Huei Yang, Yu Hung Chen, Wen Tse Chang, Ju Hung Lin," Optical characteristics of an Al/nano-SiO2/n-type Si MOS photodetector by using spin-coating deposited oxide," Micro & Nano Letters, Vol. 7, pp. 252–255 (2012).[Abstract]

2012.03

J. D. Hwang*, Y. H. Chen, "Carrier transport mechanism on ZnO nanorods/p-Si heterojunction diodes with various atmospheres annealing hydrothermal seed-layer", Thin Solid Films 520, 5409-5412 (2012). [Abstract]

2012.04

J. D. Hwang*, Y. H. Chen, "Effects of pre-annealing conditions on the characteristics of ZnO nanorods and ZnO/p-Si heterojunction diodes grown through hydrothermal method", Thin Solid Films 520, 5294-5299 (2012). [Abstract]

2012.07

Jun-Dar Hwang, Gow-Huei Yang, Yu-Hung Chen, Wen Tse Chang, Jun-Hung Lin, Jun-Chin Liu, " Photodetective characteristics of Al/LPD-oxide/n-type Si MOS with tunneling structures", Micro & Nano Letters 7, 697-699 (2012). [Abstract]

2014.05

J. D.  Hwang*, M. J. Lai, H. Z. Chen, and M. C. Kao, "Au-Mediated Surface Plasmon Enhanced Ultraviolet Response of p-Si/n-ZnO Nanorods Photodetectors," IEEE Photo. Tech. Lett. 26, 1023-1026, (2014 May). [Abstract]

2014.05

J. D. Hwang*, F. H. Wang, C. Y. Kung, M. J. Lai, and M. C. Chan,"Annealing effects of Au nanoparticles on the surface-plasmon enhanced p-Si/n-ZnO nanorods heterojunction photodetectors," J. Appl. Phys. 115, 173110:1-5 (2014 May). [Abstract]

2014.05

Jun-Dar Hwang*, Din-Han Wu, and Sheng-Beng Hwang, "Enhanced Ultraviolet Response of P-Si/SiOx/i-ZnO/n-ZnO Photodetectors," IEEE Photo. Tech. Lett. 26, 1081-1084, (2014 May).[Abstract]

2014.10

J. D. Hwang*, W. J. Yan, and J.H. Chen, " Study of Growing Zinc Oxide on Polycrystalline Silicon/Glass Substrate Prepared by Aluminum-induced crystallization of Amorphous Silicon ," Mater. Sci. Semiconductor Process 26 , pp.677-680 (2014 October).

2014.12

J. D. Hwang*, W. J. Yan, " Using aluminum-induced polycrystalline silicon to enhance ultraviolet to visible rejection ratio of ZnO/Si heterojunction photodetectors ," Solar Energy Materials and Solar Cells 134, pp.227-230(2015 January).

2015.03

J. D.Hwang* , F. H.Wang, C. Y. Kung, and M. C. Chan, "Usingthe Surface Plasmon Resonance of Au Nanoparticles to EnhanceUltravioletResponse of ZnO Nanorods-Based Schottky-Barrier Photodetectors," IEEE Trans. Nanotechnology 14, 318-321(2015 March). (SCI)

2015.05

J. D. Hwang*, D. H. Wu, and S. B. Hwang, " Inserting an i-ZnO layerto increase the performance of p-Si/n-ZnO heterojunction photodetectors, " Mater. Sci.Semiconductor Process 39, pp. 132-135 (2015 May).

2015.09

J.D. Hwang*, J.S. Lin (林俊碩), and S.B. Hwang, "Annealing effects on MgZnO films and applications in Schottky-barrier photodetectors," J. Phys. D: Appl. Phys 48, pp. 405103:1-6 (2015 September). (SCI)

2015.10

J. D. Hwang*, Y. D. Chan, and T. C. Chou, "Wavelength-Band-tuning photodiodes by using various metallic nanoparticles," Nanotechnology 26, pp. 465202:1-6 (2015 December). (SCI).

2016.01

J. D. Hwang*, S. Y. Wang (王生佑), and S. B. Hwang,"Using oxygen-plasma treatment to improve the photoresponse of Mg0.18Zn0.82O/p-Si heterojunction photodetectors," J. Alloy. compd. 656, pp.618-621 (2016 January).(SCI :3.133) [Abstract]

2016.08

J. D. Hwang*, G. S. Lin," Single- and dual-wavelength photodetectors with MgZnO/ZnO metal-semiconductor-metal structure by varying the bias voltage," Nanotechnology 27, 375502:1-6, (2016 August).(SCI : 3.440)[Abstract]

2016.12

Jun-Dar Hwang*, Lee-Chi Luo, Sanjaya Brahma, Kuang-Yao Lo, "The effect of high concentration of phosphorus in aluminum-induced crystallization of amorphous silicon films," Thin Solid Films 618, 50-54, (2016 December) (SCI:1.879)[Abstract]

2017.01

J. D. Hwang* , G. S. Lin, and S. B. Hwang, "Effects of MgxZn1-xO Thickness on the Bandwidth of Metal-Semiconductor-Metal Band-Pass Photodetectors," IEEE Transactions on Electron Devices Volume 64 Issue 1 ,195-199 (2017 January) (SCI) [Abstract]

2017.03

J.D. Hwang* and Y.C. Chang, "Effects of oxygen-plasma treatment on the structure and optical properties of MgxZn1−xOfilms," Materials Science in Semiconductor Processing Volume 64 Pages 6-9(June 2017)  (SCI) [Abstract]

2017.07

J. D. Hwang* and Y. C. Chang," Enhancing the Ultraviolet/Visible Rejection Ratio of MgxZn1-xO Metal-Semiconductor-Metal Photodetectors Using Oxygen-Plasma Treatment," IEEE Transactions on Electron Devices Volume 64 Issue 8, 3234-3238. (2017 July) (SCI) [Abstract]

2017.07

J. D. Hwang*, C. C. Yang, and C. M. Chu," MgZnO/ZnO Two-Dimensional Electron Gas Photodetectors Fabricated by RF-Sputtering," ACS Applied Materials & Interfaces , 23904-23908. (2017 July) (SCI) [Abstract]

2017.09

J. D. Hwang and T. H. Ho, "Effects of oxygen content on the structural, optical, and electrical properties of NiO films fabricated by radio-frequency magnetron sputtering," Materials Science in Semiconductor Processing Vol.71, 396-400. (2017 September) (SCI)[Abstract]

2018.04

J. D. Hwang*, J. S. Lin and S. B. Hwang, "Mg thermal diffusion behavior on the band modulation of MgxZn1-xO/ZnO metal-semiconductor-metal photodetectors," Journal of Materials Science Semiconductor Process 83, 18-211 (2018 April). (SCI) [Abstract]

2018.06

Jun-Dar Hwang*, Hsin-Yu Chen, Yu-Huang Chen, and Ting-Hsiu Ho, "Effect of nickel diffusion and oxygen behavior on heterojunction Schottky diodes," Nanotechnology 29, 295705:1-7 (2018 June). (SCI) [Abstract]

2018.08

Jun-Dar Hwang*, H. C. Chiu, and C. I. Jiang, "MgxZn1-xO/ZnO quantum well photodetectors fabricated by radio-frequency magnetron sputtering", IEEE Photonics Technology Letter , pp. 1583-1586 (2018 August). (SCI) [Abstract]

2019.01

Jun-Dar Hwang* and Wei-Ming Lin , "Enhancing the photoresponse of p-NiO/n-ZnO heterojunction photodiodes using post ZnO treatment", IEEE Trans. Nanotechnology 18, 126-131. (2019 January) (SCI) [Abstract]

2019.03

J. D. Hwang*, H. C. Chiu, and C. I. Jiang, "High-performance organic/inorganic hybrid ultraviolet p-NiO/PVK/n-ZnO heterojunction photodiodes with a poly (N-vinylcarbazole) insertion layer", J. Mater. Chem. C. 7, pp. 3529-3534 (March 2019) (SCI) [Abstract]

 

*Corresponding author

完整著作資料 請查詢 科技部 研究人才查詢系統:https://arsp.most.gov.tw/NSCWebFront/modules/talentSearch/talentSearch.do?action=initSearchList

本校教師研究成果 亦可查詢 校務行政系統:https://web085003.adm.ncyu.edu.tw/pub_wres2x0a.aspx

 

IV. 開設課程(教學大綱)︰

  

學年.學期

  課程名稱

98.1

專題討論(I)電子學(II電子學實驗(I專題研究(III

98.2

半導體元件物理半導體磁電性質導論半導體製程導論

99.1

專題研究(I-光電半導體元件 普通物理學實驗 電子學 I

99.2

專題研究(II-晶體光學   電子學(II   電子學實驗

100.1

半導體與光電製程設備    電子學 I 

100.2

普通物理學(II  電子學(II    電子學實驗

101.1

專題討論(I)    電子學 I    電子學實驗(I  

101.2

科學與生活(-)    電子學(II   專題研究(IV 書報討論(III普通物理學  

102.1

專題討論(I)    電子學(II   電子學實驗   專題研究(I

102.2

光電半導體元件電子學 I 專題研究(IV

103.1

太陽能電池電路學電子學實驗電子學(II

103.2

電子學 I專題研究(II普通物理學

104.1

光電半導體元件電子學(II)電子學實驗

104.2

電子學(I)普通物理學

105.1

光電半導體元件電子學(II)電子學實驗

105.2

普通物理學電子學 I

106.1

電子學II電子學實驗I

106.2

太陽能電池電子學 (I)專題研究(IV)

107.1

電子學(II)電子學實驗(I)

107.2

太陽能電池電子學 (I)專題研究(II)電子學 (I)演習

其他學期之課程 請查詢 校務行政系統:https://web085003.adm.ncyu.edu.tw/pub_course.aspx



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國立嘉義大學 電子物理學系
聯絡地址:60004 嘉義市 學府路 300 號
系辦公室 電話:05-271-7911,傳真:05-271-7909

Department of Electrophysics, National Chiayi University
300 Syuefu Road, Chiayi City 60004, Taiwan
Phone: +886-5-271-7911;  Fax: +886-5-271-7909
E-mail: dap@mail.ncyu.edu.tw

 

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