黃俊達 特聘教授 Distinguished Professor Jun-Dar Hwang  科技部學術研發網 學術成果連結(NCYU)

教師研究室：電物二館 A18B-307(2)   　研究室電話：(05) 271-7958   　電子信箱：jundar@mail.ncyu.edu.tw

研究實驗室：微電子實驗室 實驗室位置：電物一館 A15-305  實驗室電話：(05) 271-7857

I. 主要學歷：

II. 現職及與專長相關之經歷：

 III. 近期代表著作︰

年.月	作者、題目、期刊名稱、卷數、頁數、年份
2009.01	Jun-Dar Hwang, C. J. Lin, "High 366/254 nm Rejection Contrast GaN MIS Photodetectors Using Nano Spin-Oxide," IEEE Electron Device Letters 30, 27 (2009). [Abstract]
2009.06	C H Lan, J D Hwang, S J Chang, Y C Lin, Y C Cheng, W J Lin, J C Lin, K J Chang, "Nitride-based metal-insulator-semiconductor capacitors with liquid-phase deposition oxide and (NH4)2Sx pretreatment prepared on sapphire substrates," Semiconductor Science & Technology 24, 075026 (2009). [Abstract]
2009.08	Chung Yuan Kung, Jun Dar Hwang, Yu Hong Chen, Pan Sheu Chen, and Hsun Joung Chan, "Investigation of Electrical Properties of Thermally Annealed SiGe Metal-Oxide-Semiconductor Capacitors Prepared by Liquid-Phase Deposition of Silicon Dioxide," Japanese Journal of Applied Physics 48, 086503 (2009). [Abstract]
2009.12	J. D. Hwang, Y. H. Chen, and P. S. Chen, "Different Growth-Temperature Effects on the Liquid-Phase-Deposited SiO2 Grown on Strained SiGe," Electrochemical and Solid-State Letters 13, H45 (2010). [Abstract]
2010.02	J. D. J. D. Hwang, and C. H. Chou, "On the origin of leakage current reduction in TiO2 passivated porosus silicon Schottky-barrier diode,'' Applied Physics Letters 96, 063503 (2010). [Abstract]
2010.04	C. H. Lan, J. D. Hwang, S. J. Chang, Y. C. Cheng, W. J. Lin, J. C. Lin, J. S. Liao, and Y. L. Lin, "(NH4)2Sx-Treated AlGaN MIS Photodetectors with LPD SiO2 Layer," Journal of The Electrochemical Society 157, H613 (2010). [Abstract]
2010.08	C. H. Lan, J. D. Hwang*, S. J. Chang, J. S. Liao, Y. C. Cheng, W. J. Lin, and J. C. Lin, "Investigations of ZnO nanowires and ZnO/p-GaN heterojunction diodes grown by different aqueous solutions zinc nitrate and zinc acetate," Electrochemical and Solid-State Letters 13, H363 (2010). [Abstract]
2010.08	J.D. Hwang*, D.S. Lin, Y.L. Lin, W.T. Chang, G.H. Yang, "Electrical properties of metal-oxide-semiconductor capacitors using liquid-phase deposited silicon-dioxide gate dielectric on sulfur-passivated germanium," Thin Solid Films 519, 833 (2010). [Abstract]
2010.12	J.D. Hwang*, S.B. Hwang, C.H. Chou, Y.H. Chen, "Investigation of opto-electronic properties on gradient-porosity porous silicon layer," Thin Solid Films 519, 2313 (2011). [Abstract]
2011.01	J.D. Hwang*, E.H. Zhang, "Effects of a a-Si:H layer on reducing the dark current of 1310 nm metal–germanium–metal photodetectors," Thin Solid Films 519, 3819 (2011).[Abstract]
2011.08	Wen-Tse Chang, Gwo-Huei Yang, Jun-Dar Hwang, Jun-Hung Lin,"High-quality nano spin-oxide for possible applications in metal–oxide semiconductor field-effect transistor", Micro & Nano Letters 6, 686–688  (2011). [Abstract]
2011.11	Gwo-Huei Yang, Wen-Tse Chang, Jun-Dar Hwang, Jun-Hung Lin, Yu-Hung Chen, "Effect of N2-annealing on n-type Si metal–oxide–semiconductor capacitors by using liquid-phase deposition SiO2", Micro & Nano Letters 6, p. 944 (2011). [Abstract]
2011.12	Jun-Dar Hwang, Li-Shang Lin, Ting-Jen Hsueh, and Sheng-Beng Hwang, "Large-Grain Epitaxial Thickening Polycrystalline Silicon Films on AIC-Seed Layer by HWCVD with Different Hydrogen Dilution", Electrochemical and Solid-State Letters 15 (3), H69-H71 (2012). [Abstract]
2012.01	Gow-Huei Yang, Jun-Dar Hwang, Yu-Hung Chen, and Chien-Mao Chan, "Comparison of electrical and optical properties of Al/SiO2/n-GaN and ITO/SiO2/n-GaN metal–oxide–semiconductor photodetectors", Micro & Nano Letters 7(1), 95 (2012). [Abstract]
2012.03	Jun Dar Hwang, Gwo Huei Yang, Yu Hung Chen, Wen Tse Chang, Ju Hung Lin," Optical characteristics of an Al/nano-SiO2/n-type Si MOS photodetector by using spin-coating deposited oxide," Micro & Nano Letters, Vol. 7, pp. 252–255 (2012).[Abstract]
2012.03	J. D. Hwang*, Y. H. Chen, "Carrier transport mechanism on ZnO nanorods/p-Si heterojunction diodes with various atmospheres annealing hydrothermal seed-layer", Thin Solid Films 520, 5409-5412 (2012). [Abstract]
2012.04	J. D. Hwang*, Y. H. Chen, "Effects of pre-annealing conditions on the characteristics of ZnO nanorods and ZnO/p-Si heterojunction diodes grown through hydrothermal method", Thin Solid Films 520, 5294-5299 (2012). [Abstract]
2012.07	Jun-Dar Hwang, Gow-Huei Yang, Yu-Hung Chen, Wen Tse Chang, Jun-Hung Lin, Jun-Chin Liu, " Photodetective characteristics of Al/LPD-oxide/n-type Si MOS with tunneling structures", Micro & Nano Letters 7, 697-699 (2012). [Abstract]
2014.05	J. D.  Hwang*, M. J. Lai, H. Z. Chen, and M. C. Kao, "Au-Mediated Surface Plasmon Enhanced Ultraviolet Response of p-Si/n-ZnO Nanorods Photodetectors," IEEE Photo. Tech. Lett. 26, 1023-1026, (2014 May). [Abstract]
2014.05	J. D. Hwang*, F. H. Wang, C. Y. Kung, M. J. Lai, and M. C. Chan,"Annealing effects of Au nanoparticles on the surface-plasmon enhanced p-Si/n-ZnO nanorods heterojunction photodetectors," J. Appl. Phys. 115, 173110:1-5 (2014 May). [Abstract]
2014.05	Jun-Dar Hwang*, Din-Han Wu, and Sheng-Beng Hwang, "Enhanced Ultraviolet Response of P-Si/SiOx/i-ZnO/n-ZnO Photodetectors," IEEE Photo. Tech. Lett. 26, 1081-1084, (2014 May).[Abstract]
2014.10	J. D. Hwang*, W. J. Yan, and J.H. Chen, " Study of Growing Zinc Oxide on Polycrystalline Silicon/Glass Substrate Prepared by Aluminum-induced crystallization of Amorphous Silicon ," Mater. Sci. Semiconductor Process 26 , pp.677-680 (2014 October).
2014.12	J. D. Hwang*, W. J. Yan, " Using aluminum-induced polycrystalline silicon to enhance ultraviolet to visible rejection ratio of ZnO/Si heterojunction photodetectors ," Solar Energy Materials and Solar Cells 134, pp.227-230(2015 January).
2015.03	J. D.Hwang* , F. H.Wang, C. Y. Kung, and M. C. Chan, "Usingthe Surface Plasmon Resonance of Au Nanoparticles to EnhanceUltravioletResponse of ZnO Nanorods-Based Schottky-Barrier Photodetectors," IEEE Trans. Nanotechnology 14, 318-321(2015 March). (SCI)
2015.05	J. D. Hwang*, D. H. Wu, and S. B. Hwang, " Inserting an i-ZnO layerto increase the performance of p-Si/n-ZnO heterojunction photodetectors, " Mater. Sci.Semiconductor Process 39, pp. 132-135 (2015 May).
2015.09	J.D. Hwang*, J.S. Lin (林俊碩), and S.B. Hwang, "Annealing effects on MgZnO films and applications in Schottky-barrier photodetectors," J. Phys. D: Appl. Phys 48, pp. 405103:1-6 (2015 September). (SCI)
2015.10	J. D. Hwang*, Y. D. Chan, and T. C. Chou, "Wavelength-Band-tuning photodiodes by using various metallic nanoparticles," Nanotechnology 26, pp. 465202:1-6 (2015 December). (SCI).
2016.01	J. D. Hwang*, S. Y. Wang (王生佑), and S. B. Hwang,"Using oxygen-plasma treatment to improve the photoresponse of Mg0.18Zn0.82O/p-Si heterojunction photodetectors," J. Alloy. compd. 656, pp.618-621 (2016 January).(SCI :3.133) [Abstract]
2016.08	J. D. Hwang*, G. S. Lin," Single- and dual-wavelength photodetectors with MgZnO/ZnO metal-semiconductor-metal structure by varying the bias voltage," Nanotechnology 27, 375502:1-6, (2016 August).(SCI : 3.440)[Abstract]
2016.12	Jun-Dar Hwang*, Lee-Chi Luo, Sanjaya Brahma, Kuang-Yao Lo, "The effect of high concentration of phosphorus in aluminum-induced crystallization of amorphous silicon films," Thin Solid Films 618, 50-54, (2016 December) (SCI:1.879)[Abstract]
2017.01	J. D. Hwang* , G. S. Lin, and S. B. Hwang, "Effects of MgxZn1-xO Thickness on the Bandwidth of Metal-Semiconductor-Metal Band-Pass Photodetectors," IEEE Transactions on Electron Devices Volume 64 Issue 1 ,195-199 (2017 January) (SCI) [Abstract]
2017.03	J.D. Hwang* and Y.C. Chang, "Effects of oxygen-plasma treatment on the structure and optical properties of MgxZn1−xOfilms," Materials Science in Semiconductor Processing Volume 64 Pages 6-9(June 2017)  (SCI) [Abstract]
2017.07	J. D. Hwang* and Y. C. Chang," Enhancing the Ultraviolet/Visible Rejection Ratio of MgxZn1-xO Metal-Semiconductor-Metal Photodetectors Using Oxygen-Plasma Treatment," IEEE Transactions on Electron Devices Volume 64 Issue 8, 3234-3238. (2017 July) (SCI) [Abstract]
2017.07	J. D. Hwang*, C. C. Yang, and C. M. Chu," MgZnO/ZnO Two-Dimensional Electron Gas Photodetectors Fabricated by RF-Sputtering," ACS Applied Materials & Interfaces , 23904-23908. (2017 July) (SCI) [Abstract]
2017.09	J. D. Hwang and T. H. Ho, "Effects of oxygen content on the structural, optical, and electrical properties of NiO films fabricated by radio-frequency magnetron sputtering," Materials Science in Semiconductor Processing Vol.71, 396-400. (2017 September) (SCI)[Abstract]
2018.04	J. D. Hwang*, J. S. Lin and S. B. Hwang, "Mg thermal diffusion behavior on the band modulation of MgxZn1-xO/ZnO metal-semiconductor-metal photodetectors," Journal of Materials Science Semiconductor Process 83, 18-211 (2018 April). (SCI) [Abstract]
2018.06	Jun-Dar Hwang*, Hsin-Yu Chen, Yu-Huang Chen, and Ting-Hsiu Ho, "Effect of nickel diffusion and oxygen behavior on heterojunction Schottky diodes," Nanotechnology 29, 295705:1-7 (2018 June). (SCI) [Abstract]
2018.08	Jun-Dar Hwang*, H. C. Chiu, and C. I. Jiang, "MgxZn1-xO/ZnO quantum well photodetectors fabricated by radio-frequency magnetron sputtering", IEEE Photonics Technology Letter , pp. 1583-1586 (2018 August). (SCI) [Abstract]
2019.01	Jun-Dar Hwang* and Wei-Ming Lin , "Enhancing the photoresponse of p-NiO/n-ZnO heterojunction photodiodes using post ZnO treatment", IEEE Trans. Nanotechnology 18, 126-131. (2019 January) (SCI)。 [Abstract]
2019.03	J. D. Hwang*, H. C. Chiu, and C. I. Jiang, "High-performance organic/inorganic hybrid ultraviolet p-NiO/PVK/n-ZnO heterojunction photodiodes with a poly (N-vinylcarbazole) insertion layer", J. Mater. Chem. C. 7, pp. 3529-3534 (March 2019) (SCI)。 [Abstract]
2019.09	Jun Dar Hwang* and Jhong Yung Jiang,"Barrier thickness dependence of MgxZn1-xO/ZnO quantum well (QW) on the performance of p-NiO/QW/n-ZnO photodiode",RSC Advances 9, pp. 29967-29972 (September 2019)[Abstract]
2020.01	J.D. Hwang*, C.I. Jianga, and S.B. Hwang, "P-NiO/n-ZnO heterojunction photodiodes with an MgZnO/ZnO quantum well insertion layer," Mater. Sci. Semiconductor Process. 105, pp. 104711:1-6 (January 2020) (SCI)。 [Abstract]
2020.05	Jun-Dar Hwang*, Wang-Ting Hsu, Bo-Yu Lin, Yu-Ting Hwang, and Shr-Ting Wang," Effects of Ag-doping on the characteristics of AgxNi1-xO transparent conducting oxide film and their applications in heterojunction diodes", J. Phys. D: Appl. Phys. 53, pp. 275107:1-7 (May 2020). (SCI) [Abstract]
	*Corresponding author

完整著作資料 請查詢 科技部 研究人才查詢系統：https://arsp.most.gov.tw/NSCWebFront/modules/talentSearch/talentSearch.do?action=initSearchList

本校教師研究成果 亦可查詢 校務行政系統：https://web085003.adm.ncyu.edu.tw/pub_wres2x0a.aspx

IV. 開設課程（教學大綱）︰

其他學期之課程 請查詢 校務行政系統：https://web085003.adm.ncyu.edu.tw/pub_course.aspx