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202010月份
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[4] [5] [6] [7] [8] [9] [10]
[11] [12] [13] [14] [15] [16] [17]
[18] [19] [20] [21] [22] [23] [24]
[25] [26] [27] [28] [29] [30] [31]

最後更新2020/10/21
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:::* 首頁 > 院長簡介
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姓名

黃俊達/博士   Jun  Dar  Hwang

單位

電子物理學系/教授

現職

理工學院/院長

I.主要學歷

/肄業學校

國別

主修系所

學位

起訖年月

國立台灣科技大學

中華民國

電機系

學士

198409~198606

國立成功大學

中華民國

電機研究所

碩士

198809~199006

國立成功大學

中華民國

電機研究所

博士

199109~199601

 

II. 現職及與專長相關之經歷:

服務機關

服務部門/系所

職稱

起訖年月

現職

國立嘉義大學

電子物理學系

特聘教授

201401月迄今

國立嘉義大學

電子物理學系

教授兼系主任與所長

201002~201301

 

經歷

聯華電子公司

開發處

工程師

199007~199108

中洲科技大學

電子工程系

副教授

199602~200101

大葉大學

電機系

副教授

200102~200507

大葉大學

電機系

教授

200508~200807

國立嘉義大學

應用物理學系

副教授

200808~200907

國立嘉義大學

應用物理學系

教授

200908~201001

 

III.近期代表著作:

 

.

作者、題目、期刊名稱、卷數、頁數、年份

2009.01

Jun-Dar Hwang, C. J. Lin, "High 366/254 nm Rejection Contrast GaN MIS Photodetectors Using Nano Spin-Oxide," IEEE Electron Device Letters 30, 27 (2009). [Abstract]

2009.06

C H Lan, J D Hwang, S J Chang, Y C Lin, Y C Cheng, W J Lin, J C Lin, K J Chang, "Nitride-based metal-insulator-semiconductor capacitors with liquid-phase deposition oxide and (NH4)2Sx pretreatment prepared on sapphire substrates," Semiconductor Science & Technology 24, 075026 (2009). [Abstract]

2009.08

Chung Yuan Kung, Jun Dar Hwang, Yu Hong Chen, Pan Sheu Chen, and Hsun Joung Chan, "Investigation of Electrical Properties of Thermally Annealed SiGe Metal-Oxide-Semiconductor Capacitors Prepared by Liquid-Phase Deposition of Silicon Dioxide," Japanese Journal of Applied Physics 48, 086503 (2009). [Abstract]

2009.12

J. D. Hwang, Y. H. Chen, and P. S. Chen, "Different Growth-Temperature Effects on the Liquid-Phase-Deposited SiO2 Grown on Strained SiGe," Electrochemical and Solid-State Letters 13, H45 (2010). [Abstract]

2010.02

J. D. J. D. Hwang, and C. H. Chou, "On the origin of leakage current reduction in TiO2 passivated porosus silicon Schottky-barrier diode,'' Applied Physics Letters 96, 063503 (2010). [Abstract]

2010.04

C. H. Lan, J. D. Hwang, S. J. Chang, Y. C. Cheng, W. J. Lin, J. C. Lin, J. S. Liao, and Y. L. Lin, "(NH4)2Sx-Treated AlGaN MIS Photodetectors with LPD SiO2 Layer," Journal of The Electrochemical Society 157, H613 (2010). [Abstract]

2010.08

C. H. Lan, J. D. Hwang*, S. J. Chang, J. S. Liao, Y. C. Cheng, W. J. Lin, and J. C. Lin, "Investigations of ZnO nanowires and ZnO/p-GaN heterojunction diodes grown by different aqueous solutions zinc nitrate and zinc acetate," Electrochemical and Solid-State Letters 13, H363 (2010). [Abstract]

2010.08

J.D. Hwang*, D.S. Lin, Y.L. Lin, W.T. Chang, G.H. Yang, "Electrical properties of metal-oxide-semiconductor capacitors using liquid-phase deposited silicon-dioxide gate dielectric on sulfur-passivated germanium," Thin Solid Films 519, 833 (2010). [Abstract]

2010.12

J.D. Hwang*, S.B. Hwang, C.H. Chou, Y.H. Chen, "Investigation of opto-electronic properties on gradient-porosity porous silicon layer," Thin Solid Films 519, 2313 (2011). [Abstract]

2011.01

J.D. Hwang*, E.H. Zhang, "Effects of a a-Si:H layer on reducing the dark current of 1310 nm metal–germanium–metal photodetectors," Thin Solid Films 519, 3819 (2011).[Abstract]

2011.08

Wen-Tse Chang, Gwo-Huei Yang, Jun-Dar Hwang, Jun-Hung Lin,"High-quality nano spin-oxide for possible applications in metal–oxide semiconductor field-effect transistor", Micro & Nano Letters 6, 686–688  (2011). [Abstract]

2011.11

Gwo-Huei Yang, Wen-Tse Chang, Jun-Dar Hwang, Jun-Hung Lin, Yu-Hung Chen, "Effect of N2-annealing on n-type Si metal–oxide–semiconductor capacitors by using liquid-phase deposition SiO2", Micro & Nano Letters 6, p. 944 (2011). [Abstract]

2011.12

Jun-Dar Hwang, Li-Shang Lin, Ting-Jen Hsueh, and Sheng-Beng Hwang, "Large-Grain Epitaxial Thickening Polycrystalline Silicon Films on AIC-Seed Layer by HWCVD with Different Hydrogen Dilution", Electrochemical and Solid-State Letters 15 (3), H69-H71 (2012). [Abstract]

2012.01

Gow-Huei Yang, Jun-Dar Hwang, Yu-Hung Chen, and Chien-Mao Chan, "Comparison of electrical and optical properties of Al/SiO2/n-GaN and ITO/SiO2/n-GaN metal–oxide–semiconductor photodetectors", Micro & Nano Letters 7(1), 95 (2012). [Abstract]

2012.03

Jun Dar Hwang, Gwo Huei Yang, Yu Hung Chen, Wen Tse Chang, Ju Hung Lin," Optical characteristics of an Al/nano-SiO2/n-type Si MOS photodetector by using spin-coating deposited oxide," Micro & Nano Letters, Vol. 7, pp. 252–255 (2012).[Abstract]

2012.03

J. D. Hwang*, Y. H. Chen, "Carrier transport mechanism on ZnO nanorods/p-Si heterojunction diodes with various atmospheres annealing hydrothermal seed-layer", Thin Solid Films 520, 5409-5412 (2012). [Abstract]

2012.04

J. D. Hwang*, Y. H. Chen, "Effects of pre-annealing conditions on the characteristics of ZnO nanorods and ZnO/p-Si heterojunction diodes grown through hydrothermal method", Thin Solid Films 520, 5294-5299 (2012). [Abstract]

2012.07

Jun-Dar Hwang, Gow-Huei Yang, Yu-Hung Chen, Wen Tse Chang, Jun-Hung Lin, Jun-Chin Liu, " Photodetective characteristics of Al/LPD-oxide/n-type Si MOS with tunneling structures", Micro & Nano Letters 7, 697-699 (2012). [Abstract]

2014.05

J. D.  Hwang*, M. J. Lai, H. Z. Chen, and M. C. Kao, "Au-Mediated Surface Plasmon Enhanced Ultraviolet Response of p-Si/n-ZnO Nanorods Photodetectors," IEEE Photo. Tech. Lett. 26, 1023-1026, (2014 May). [Abstract]

2014.05

J. D. Hwang*, F. H. Wang, C. Y. Kung, M. J. Lai, and M. C. Chan,"Annealing effects of Au nanoparticles on the surface-plasmon enhanced p-Si/n-ZnO nanorods heterojunction photodetectors," J. Appl. Phys. 115, 173110:1-5 (2014 May). [Abstract]

2014.05

Jun-Dar Hwang*, Din-Han Wu, and Sheng-Beng Hwang, "Enhanced Ultraviolet Response of P-Si/SiOx/i-ZnO/n-ZnO Photodetectors," IEEE Photo. Tech. Lett. 26, 1081-1084, (2014 May).[Abstract]

2014.10

J. D. Hwang*, W. J. Yan, and J.H. Chen, " Study of Growing Zinc Oxide on Polycrystalline Silicon/Glass Substrate Prepared by Aluminum-induced crystallization of Amorphous Silicon ," Mater. Sci. Semiconductor Process 26 , pp.677-680 (2014 October).

2014.12

J. D. Hwang*, W. J. Yan, " Using aluminum-induced polycrystalline silicon to enhance ultraviolet to visible rejection ratio of ZnO/Si heterojunction photodetectors ," Solar Energy Materials and Solar Cells 134, pp.227-230(2015 January).

2015.03

J. D.Hwang* , F. H.Wang, C. Y. Kung, and M. C. Chan, "Usingthe Surface Plasmon Resonance of Au Nanoparticles to EnhanceUltravioletResponse of ZnO Nanorods-Based Schottky-Barrier Photodetectors," IEEE Trans. Nanotechnology 14, 318-321(2015 March). (SCI)

2015.05

J. D. Hwang*, D. H. Wu, and S. B. Hwang, " Inserting an i-ZnO layerto increase the performance of p-Si/n-ZnO heterojunction photodetectors, " Mater. Sci.Semiconductor Process 39, pp. 132-135 (2015 May).

2015.09

J.D. Hwang*, J.S. Lin (林俊碩), and S.B. Hwang, "Annealing effects on MgZnO films and applications in Schottky-barrier photodetectors," J. Phys. D: Appl. Phys 48, pp. 405103:1-6 (2015 September). (SCI)

2015.10

J. D. Hwang*, Y. D. Chan, and T. C. Chou, "Wavelength-Band-tuning photodiodes by using various metallic nanoparticles," Nanotechnology 26, pp. 465202:1-6 (2015 December). (SCI).

2016.01

J. D. Hwang*, S. Y. Wang (王生佑), and S. B. Hwang,"Using oxygen-plasma treatment to improve the photoresponse of Mg0.18Zn0.82O/p-Si heterojunction photodetectors," J. Alloy. compd. 656, pp.618-621 (2016 January).(SCI :3.133) [Abstract]

2016.08

J. D. Hwang*, G. S. Lin," Single- and dual-wavelength photodetectors with MgZnO/ZnO metal-semiconductor-metal structure by varying the bias voltage," Nanotechnology 27, 375502:1-6, (2016 August).(SCI : 3.440)[Abstract]

2016.12

Jun-Dar Hwang*, Lee-Chi Luo, Sanjaya Brahma, Kuang-Yao Lo, "The effect of high concentration of phosphorus in aluminum-induced crystallization of amorphous silicon films," Thin Solid Films 618, 50-54, (2016 December) (SCI:1.879)[Abstract]

2017.01

J. D. Hwang* , G. S. Lin, and S. B. Hwang, "Effects of MgxZn1-xO Thickness on the Bandwidth of Metal-Semiconductor-Metal Band-Pass Photodetectors," IEEE Transactions on Electron Devices Volume 64 Issue 1 ,195-199 (2017 January) (SCI) [Abstract]

2017.03

J.D. Hwang* and Y.C. Chang, "Effects of oxygen-plasma treatment on the structure and optical properties of MgxZn1−xOfilms," Materials Science in Semiconductor Processing Volume 64 Pages 6-9(June 2017)  (SCI) [Abstract]

2017.07

J. D. Hwang* and Y. C. Chang," Enhancing the Ultraviolet/Visible Rejection Ratio of MgxZn1-xO Metal-Semiconductor-Metal Photodetectors Using Oxygen-Plasma Treatment," IEEE Transactions on Electron Devices Volume 64 Issue 8, 3234-3238. (2017 July) (SCI) [Abstract]

2017.07

J. D. Hwang*, C. C. Yang, and C. M. Chu," MgZnO/ZnO Two-Dimensional Electron Gas Photodetectors Fabricated by RF-Sputtering," ACS Applied Materials & Interfaces , 23904-23908. (2017 July) (SCI) [Abstract]

2017.09

J. D. Hwang and T. H. Ho, "Effects of oxygen content on the structural, optical, and electrical properties of NiO films fabricated by radio-frequency magnetron sputtering," Materials Science in Semiconductor Processing Vol.71, 396-400. (2017 September) (SCI)[Abstract]

2018.04

J. D. Hwang*, J. S. Lin and S. B. Hwang, "Mg thermal diffusion behavior on the band modulation of MgxZn1-xO/ZnO metal-semiconductor-metal photodetectors," Journal of Materials Science Semiconductor Process 83, 18-211 (2018 April). (SCI) [Abstract]

2018.06

Jun-Dar Hwang*, Hsin-Yu Chen, Yu-Huang Chen, and Ting-Hsiu Ho, "Effect of nickel diffusion and oxygen behavior on heterojunction Schottky diodes," Nanotechnology 29, 295705:1-7 (2018 June). (SCI) [Abstract]

2018.08

Jun-Dar Hwang*, H. C. Chiu, and C. I. Jiang, "MgxZn1-xO/ZnO quantum well photodetectors fabricated by radio-frequency magnetron sputtering", IEEE Photonics Technology Letter , pp. 1583-1586 (2018 August). (SCI) [Abstract]

2019.01

Jun-Dar Hwang* and Wei-Ming Lin , "Enhancing the photoresponse of p-NiO/n-ZnO heterojunction photodiodes using post ZnO treatment", IEEE Trans. Nanotechnology 18, 126-131. (2019 January) (SCI) [Abstract]

2019.03

J. D. Hwang*, H. C. Chiu, and C. I. Jiang, "High-performance organic/inorganic hybrid ultraviolet p-NiO/PVK/n-ZnO heterojunction photodiodes with a poly (N-vinylcarbazole) insertion layer", J. Mater. Chem. C. 7, pp. 3529-3534 (March 2019) (SCI) [Abstract]

2019.09

Jun Dar Hwang* and Jhong Yung Jiang,"Barrier thickness dependence of MgxZn1-xO/ZnO quantum well (QW) on the performance of p-NiO/QW/n-ZnO photodiode",RSC Advances 9, pp. 29967-29972 (September 2019)[Abstract]

2020.01

J.D. Hwang*, C.I. Jianga, and S.B. Hwang, "P-NiO/n-ZnO heterojunction photodiodes with an MgZnO/ZnO quantum well insertion layer," Mater. Sci. Semiconductor Process. 105, pp. 104711:1-6 (January 2020) (SCI) [Abstract]

2020.05

Jun-Dar Hwang*, Wang-Ting Hsu, Bo-Yu Lin, Yu-Ting Hwang, and Shr-Ting Wang," Effects of Ag-doping on the characteristics of AgxNi1-xO transparent conducting oxide film and their applications in heterojunction diodes", J. Phys. D: Appl. Phys. 53, pp. 275107:1-7 (May 2020). (SCI) [Abstract]

 

*Corresponding author

完整著作資料 請查詢 科技部 研究人才查詢系統:https://arsp.most.gov.tw/NSCWebFront/modules/talentSearch/talentSearch.do?action=initSearchList

本校教師研究成果 亦可查詢 校務行政系統:https://web085003.adm.ncyu.edu.tw/pub_wres2x0a.aspx

 

IV. 開設課程 (教學大綱):

  

學年.學期

  課程名稱

98.1

專題討論(I)電子學(II電子學實驗(I專題研究(III

98.2

半導體元件物理半導體磁電性質導論半導體製程導論

99.1

專題研究(I)-光電半導體元件 普通物理學實驗 電子學 (I

99.2

專題研究(II)-晶體光學   電子學(II   電子學實驗

100.1

半導體與光電製程設備    電子學 (I 

100.2

普通物理學(II  電子學(II    電子學實驗

101.1

專題討論(I)    電子學 (I    電子學實驗(I  

101.2

科學與生活(物-核)    電子學(II   專題研究(IV) 書報討論(III普通物理學  

102.1

專題討論(I)    電子學(II   電子學實驗   專題研究(I

102.2

光電半導體元件電子學 (I 專題研究(IV

103.1

太陽能電池電路學電子學實驗電子學(II

103.2

電子學 (I專題研究(II普通物理學

104.1

光電半導體元件電子學(II電子學實驗

104.2

電子學(I普通物理學

105.1

光電半導體元件電子學(II電子學實驗

105.2

普通物理學電子學 (I

106.1

電子學(II電子學實驗(I

106.2

太陽能電池電子學 (I專題研究(IV

107.1

電子學(II)電子學實驗(I)

107.2

太陽能電池電子學 (I專題研究(II電子學 (I)演習

其他學期之課程 請查詢 校務行政系統:https://web085003.adm.ncyu.edu.tw/pub_course.aspx

 



 


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